| 摘要 |
Resistors used with a semiconductor device may include resistors defined by patterned layers of polysilicon or metal defining diffusion regions within patterns of the patterned layers such that the number of squares of resistance of the resistors may be increased and dishing of glass or other material layers over the resistors are reduced or eliminated. Methods of forming such resistors may include the formation of a polysilicon or metal layer, the patterning of the layer, doping of a semiconductor substrate exposed by the pattern to form a diffused region, and connection of the diffused region to the necessary contacts to form a resistor.
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