| 摘要 |
<p>A method for fabricating a semiconductor device is provided to prevent an edge of a gate pattern from being damaged by further forming a dummy pattern for chemical mechanical polishing and a falling prevention tap. A semiconductor device includes a gate(120) formed on an edge of a wafer, in which the gate has a line width of 295nm or less and a length of 1000nm or more. Dummy patterns(140) are arranged in a direction parallel with a longitudinal direction of the gate at a periphery of an active region(110). The dummy patterns are formed on both sides of the active region so that the dummy patterns are ended at the same line as an end of the gate.</p> |
