| 摘要 |
A method of forming a trench isolation layer of a semiconductor device is provided to prevent the degradation of a gap-fill capability by removing F element from an HDP(High Density Plasma) chamber using an H2 plasma. A trench is formed on a semiconductor substrate(100). The substrate is loaded into an HDP(High Density Plasma) chamber. A first HDP oxide layer for filling partially the trench is formed on the substrate by supplying an HDP deposition source into the chamber. An overhang portion is removed from the trench by an etching process. A second HDP oxide layer(120) for filling the trench is formed on the substrate by supplying the HDP deposition source and an F based etch gas into the chamber. F is removed from the HDP chamber by using H2 plasma, wherein the H2 plasma is formed by using a mixed gas of oxygen, helium and hydrogen. An isolation layer is completed on the substrate by performing a planarization process on the second HDP oxide layer.
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