NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
摘要
<p>A nonvolatile memory device and its manufacturing method are provided to prevent the generation of punchthrough between source and drain regions in spite of a high integration degree by securing the length of a channel enough using a floating gate extended into a substrate. An active region is defined on a semiconductor substrate. A control gate electrode(56) is formed on the active region via a gate insulating layer. A floating gate(64f) is formed within the active region through the control gate electrode. The floating gate is extended into the substrate as much as a depth. A tunnel insulating layer(62) is continuously interposed at a portion between the control gate electrode and the floating gate and between the substrate and the floating gate.</p>
