| 摘要 |
A semiconductor device according to one embodiment of the present invention includes: a semiconductor substrate; a non-planar type transistor region having at least one of a fin type transistor region including a fin type transistor in which a current is induced to flow through side faces of a fin formed approximately vertically to a surface of the semiconductor substrate in a direction approximately parallel to the surface of the semiconductor substrate, and a tri-gate type transistor region including a tri-gate type transistor in which a channel is formed in three surfaces having side faces and an upper surface of a fin formed approximately vertically to the surface of the semiconductor substrate, and thus a current is induced to flow through the three surfaces in a direction approximately parallel to the surface of the semiconductor substrate; and a filling material for isolation in the non-planar type transistor region within the semiconductor substrate and which has a plurality of regions having different heights.
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