发明名称 METHOD OF FORMING DAMASCENE WIRING
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a damascene wiring having no occurrence of a drawback such as a void in wiring formation and capable of reducing signal delay, for forming a wiring pattern on a substrate by a damascene method. SOLUTION: The method of forming the damascene wiring for forming a wiring pattern on a substrate, has a step of forming a groove 2a used as a wiring pattern on an insulation film 2 formed on the substrate; a step of applying a dispersion solution 5 of a carbon nano substance 7 solved in a dispersion agent 6 on the insulation film 2, and embedding the dispersion solution 5 into the groove 2a; a step of performing baking processing to evaporate the solvent in the dispersion solution 5; a step of executing anneal processing to evaporate the dispersion solution 6 to bake the film of the carbon nano substance 7; and a step of removing a film of the excessive carbon nano substance 7 on the groove portion 2a to form a wiring pattern along the groove portion 2a. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007188926(A) 申请公布日期 2007.07.26
申请号 JP20060003351 申请日期 2006.01.11
申请人 TOKYO ELECTRON LTD 发明人 YAEGASHI HIDETAMI
分类号 H01L21/3205;H01L23/52 主分类号 H01L21/3205
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