| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III-V compound semiconductor multi-junction solar cell structure which contains no arsenic element in a cell composition and is capable of being expected to have a conversion efficiency as high as the cell of a conventional composition. <P>SOLUTION: The multi-junction solar cell is equipped with a right upper layer formed on a Ge substrate and two or more growth layers laminated on the right upper layer. The right upper layer is formed of a composition of GaInP, GaSbP or GaInNP, and the growth layers are formed of a group III-V compound semiconductor or a group III-V compound semiconductor mixed crystal consisting of a combination of Al, Ga, and In and N. P, and Sb. <P>COPYRIGHT: (C)2007,JPO&INPIT |
