| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device allowing an expanded process margin, and to provide a manufacturing method for the semiconductor memory device. SOLUTION: A polysilicon film composing memory gate wiring 7b, etc., has a portion that extends from a location on one side face of control gate wiring 5b toward the opposite side to the location of the control gate wiring 5b, and this portion serves as a pad 7c. A contact hole 15a is formed to expose the pad 7c. The height H2 of the polysilicon film located on one side face of control gate wiring 5b is determined to be equal to or less than the height H1 of the control gate wiring 5b, so that the polysilicon film composing memory gate wiring 7b, etc., does not overlap the control gate wiring 5b in a plane level. COPYRIGHT: (C)2007,JPO&INPIT
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