发明名称 |
Method for producing magnetic memory device |
摘要 |
There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element. |
申请公布号 |
US7247506(B2) |
申请公布日期 |
2007.07.24 |
申请号 |
US20060389281 |
申请日期 |
2006.03.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
AMANO MINORU;KISHI TATSUYA;SAITO YOSHIAKI;UEDA TOMOMASA;YODA HIROAKI |
分类号 |
H01L21/00;G11C11/15 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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