| 摘要 |
A semiconductor device is provided to control fluctuation of a CD(critical dimension) in an etch process for forming a fuse window and a monitoring pattern window by positioning a separated blocking layer on a monitoring pattern for monitoring the etch quantity of a fuse. A plurality of fuses(112) are formed on a substrate(100) in a fuse region, exposed through a fuse window(152). A monitoring pattern(116) is formed as a zigzag type in the same layer as the fuses, exposed through a monitoring pattern window(154). A blocking layer(124a,124b) confines the width of the monitoring pattern window, separately positioned on the monitoring pattern. The monitoring pattern can be positioned between pads in a pad region. The blocking layer can overlap a part of the monitoring pattern.
|
