| 摘要 |
A method for fabricating a semiconductor device is provided to improve the refresh characteristic by patterning an isolation layer after a recess gate region is formed. A recess gate region(10) is formed in the active region of a semiconductor substrate. An isolation layer(20) is formed in the semiconductor substrate. In the recess gate region, an exposure source having a lower wavelength than that of the exposure source in the isolation layer is used. A recess gate is formed on the active region. The recess gate region can be of a contact hole type, formed by a resist reflow process. ArF can be used as an exposure source in the process for forming the isolation layer.
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