发明名称 ATOMIC LAYER DEPOSITION PROCESS
摘要 PROBLEM TO BE SOLVED: To provide an atomic layer deposition process capable of forming a uniform layer on a substrate. SOLUTION: The atomic layer deposition process to form the uniform layer on the substrate comprises the steps of carrying the substrate in a reaction chamber; forming an intermediate product by introducing a first precursor into the reaction chamber, and by reacting the first precursor on a front surface of the substrate; forming a primary product by introducing a second precursor having a first sticking coefficient into the reaction chamber, and by reacting the second precursor with a part of the intermediate product; forming a secondary product by introducing a third precursor having a large sticking coefficient into the reaction chamber, and by reacting the third precursor with a remaining part of the intermediate product; and reducing an effective sticking coefficient of the third precursor by the second precursor and the primary product of the second precursor which partially cover the surface. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007184578(A) 申请公布日期 2007.07.19
申请号 JP20060338407 申请日期 2006.12.15
申请人 QIMONDA AG 发明人 ERBEN ELKE;JAKSCHIK STEFAN;KERSCH ALFRED;LINK ANGELA;SUNDQVIST JONAS
分类号 H01L21/318 主分类号 H01L21/318
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