发明名称 PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment device and a plasma treatment method in which a problem of a possibility of occurrence of an irregular discharge in a reaction chamber which damages the point where the irregular discharge occurs and which melts a member and generates particles is solved by reducing a moisture degree in a treatment chamber to prevent the irregular discharging in a stable and reproducible way, without conducting a heat treatment by controlling a heating time which can be obtained empirically in a conventional method. <P>SOLUTION: A preparatory treatment chamber 10A is provided neighboring a vacuum treatment chamber 10 of the plasma treatment device. In the preparatory treatment chamber 10A, a substrate W is exposed to plasma by a power in which the substrate W is not plasma-treated, while measuring a moisture degree. Only after the moisture degree goes below a predetermined level, the substrate W is shifted to the vacuum treatment chamber 10 and a plasma treatment is conducted, and an irregular discharge is prevented in the vacuum treatment chamber 10. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007184285(A) 申请公布日期 2007.07.19
申请号 JP20070001147 申请日期 2007.01.09
申请人 NEC ELECTRONICS CORP 发明人 ITO NATSUKO;UESUGI FUMIHIKO
分类号 H05H1/46;B01J19/08;C23C14/02;C23C16/02;H01L21/205;H01L21/3065 主分类号 H05H1/46
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