Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

摘要

The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR¹)₄ (wherein R¹ represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R¹, the R¹s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.