发明名称 Dynamically tunable resistor or capacitor using a non-volatile floating gate memory cell
摘要 An integrated circuit programmable resistor or programmable capacitor has a floating gate memory cell connected either in series or in parallel to a fixed resistor or a fixed capacitor. The resistance or the capacitance of the floating gate memory cell can be changed by the amount of charge stored on the floating gate which affects the resistance or the capacitance of the channel from which the floating gate is spaced apart. A particular application of the programmable resistor/capacitor is used in a system whereby the resistance or the capacitance can be change or fine tuned as a result of either drift caused by time or by operating conditions such as temperature. Thus, the temperature of the substrate in which the floating gate memory cell is fabricated can be monitored and the resistance or the capacitance of the floating gate memory cell changed dynamically.
申请公布号 US7245529(B2) 申请公布日期 2007.07.17
申请号 US20050092227 申请日期 2005.03.28
申请人 SILICON STORAGE TECHNOLOGY, INC. 发明人 CHEN BOMY;JEW KEVIN GENE-WAH
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
主权项
地址