GaN-based semiconductor junction structure

摘要

The present invention is to provide a group III nitride tunneling junction structure with a low tunneling potential barrier, in which Si layer or a group III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0<=a<=1, 0<=b<=1, 0<=c<=1, 0<=d<=1, 0<=e<=1) which has a smaller band gap than that of Al(x)Ga(y)In(z)N (0<=x<=1, 0<=y<=1, 0<=z<=1) and can be doped with a high concentration of p is inserted into a tunneling junction based on a P⁺⁺-Al(x)Ga(y)In(z)N (0<=x<=1, 0<=y<=1, 0<=z<=1) LAYER AND A N⁺⁺-Al(x)Ga(y)In(z)N (0<=x<=1, 0<=y<=1, 0<=z<=1) layer. This tunneling junction structure will be useful for the fabrication of a highly reliable ultrahigh-speed optoelectronic device.