发明名称 |
Method of manufacturing a capacitor having improved capacitance and method of manufacturing a semiconductor device including the capacitor |
摘要 |
A method for manufacturing a capacitor is disclosed. An etch-stop layer or a polishing stop layer is employed to protect a storage electrode of the capacitor from being damaged by a chemical mechanical polishing process or an etch-back process during its fabrication.
|
申请公布号 |
US7244649(B2) |
申请公布日期 |
2007.07.17 |
申请号 |
US20040007443 |
申请日期 |
2004.12.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JAE-DONG;HONG CHANG-KI;PARK YOUNG-RAE |
分类号 |
H01L21/8242;H01L21/02;H01L21/20 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|