发明名称 Method of manufacturing a capacitor having improved capacitance and method of manufacturing a semiconductor device including the capacitor
摘要 A method for manufacturing a capacitor is disclosed. An etch-stop layer or a polishing stop layer is employed to protect a storage electrode of the capacitor from being damaged by a chemical mechanical polishing process or an etch-back process during its fabrication.
申请公布号 US7244649(B2) 申请公布日期 2007.07.17
申请号 US20040007443 申请日期 2004.12.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JAE-DONG;HONG CHANG-KI;PARK YOUNG-RAE
分类号 H01L21/8242;H01L21/02;H01L21/20 主分类号 H01L21/8242
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