| 摘要 |
<p>A mask measuring method is provided to check the existence of defects caused by a mask process by performing a measurement without the attack of a pattern in the mask process. A test pattern(33) is formed within a predetermined region except a cell region(32). A measurement is performed on the test pattern. The test pattern is made of a photoresist pattern. The test pattern is used as an isolation mask pattern, a gate mask pattern and a contact mask pattern. The test pattern is formed at the vacancy of a scribe lane, a dummy pattern or a die. A rework process is omitted after the measurement.</p> |
