发明名称 |
Semiconductor device having nano-pillars and method therefor |
摘要 |
A semiconductor device includes a plurality of pillars formed from a conductive material. The pillars are formed by using a plurality of nanocrystals as a hardmask for patterning the conductive material. A thickness of the conductive material determines the height of the pillars. Likewise, a width of the pillar is determined by the diameter of a nanocrystal. In one embodiment, the pillars are formed from polysilicon and function as the charge storage region of a non-volatile memory cell having good charge retention and low voltage operation. In another embodiment, the pillars are formed from a metal and function as a plate electrode for a metal-insulator-metal (MIM) capacitor having an increased capacitance without increasing the surface area of an integrated circuit.
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申请公布号 |
US7241695(B2) |
申请公布日期 |
2007.07.10 |
申请号 |
US20050244516 |
申请日期 |
2005.10.06 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MATHEW LEO;RAO RAJESH A.;MURALIDHAR RAMACHANDRAN |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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