| 摘要 |
Disclosed is a metal compound represented by the general formula (I) below which is preferably used as a precursor in a thin film production method comprising a vaporization step, particularly in a CVD method including ALD. (I) (In the formula, M represents tantalum or niobium, R1 represents an alkyl group having 1-4 carbon atoms, and R2 and R3 independently represent a hydrogen atom, a methyl group or a ethyl group.)
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