| 摘要 |
A semiconductor device and a forming method of the same are provided to prevent gate collapsing by forming a gate collapse prevention tap using a hard mask forming process. A gate(185) of a line type is formed in a mat region(M) of a semiconductor substrate(100). The gate is formed with a lamination structure of a gate polysilicon layer pattern and a gate conductive layer pattern. A hard mask layer is formed to bury a gap between the gate and the gate on the entire surface of the mat region. A gate collapse prevention tap(190) of a line type is positioned at an edge part of mat region in a longitudinal direction of the gate by etching partially the hard mask layer. The gate collapse prevention tap is perpendicular to the longitudinal direction of the gate. A hard mask pattern is formed on the gate region except for the gate collapse prevention tap.
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