| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which simplifies a peeling process and uniformly executes peeling and transfer for a large substrate. SOLUTION: A metal film is formed on a first substrate and an insulation film having a silicon is formed adjacently to the metal film, thereby forming a metal oxide film on the surface of the metal film. Then, a semiconductor element such as a thin-film transistor is formed on the insulation film. A second substrate is fixed on the semiconductor element using a first adhesive and the first substrate is peeled, and a third substrate such as a film substrate is fixed below the semiconductor element using a second adhesive and the second substrate is peeled. At this time, the substrate is irradiated with an ultraviolet ray. In this way, a decrease in the viscosity or peeling of the first adhesive is executed simultaneously with curing of the second adhesive. COPYRIGHT: (C)2007,JPO&INPIT |
