Method for fabricating a thin film and a metal line of a semiconductor device

摘要

A method for forming a thin film of a semiconductor device is provided. The method includes forming a TaN film on a semiconductor substrate by employing an atomic layer deposition method; and converting a part of the TaN film into a Ta by reacting the TaN film with NO₂ to form a Ta film. The NO₂ is formed by reacting NH₃ with O₂.