PROCESS FOR PRODUCING SOI WAFER AND SOI WAFER

摘要

A process for producing an SOI wafer, in which the occurrence of thermal strain, peeling, cracking, etc. attributed to a difference in thermal expansion coefficient between transparent insulating substrate and SOI layer can be prevented through simple and easy processing, and in which upon formation of a semiconductor device on the SOI layer, a reduction of light leakage can be attained. A single-crystal silicon with its entire surface falling in N-region outside OSF-region is grown according to Czochralski technique and sliced to thereby produce an N-region single-crystal silicon wafer. An implantation of hydrogen ion or rare gas ion from a surface of the N-region single-crystal silicon wafer is carried out to thereby form an ion implantation layer in the wafer. The ion implantation surface of the N-region single-crystal silicon wafer and/or a surface of transparent insulating substrate are/is treated with plasma and/or ozone. The ion implantation surface of the N-region single-crystal silicon wafer and the surface of the transparent insulating substrate with the treated surfaces as junction surfaces are joined in close contact at room temperature. The ion implantation layer is impacted so as to attain mechanical detachment of the single-crystal silicon wafer, thereby accomplishing formation of an SOI layer on the transparent insulating substrate.