发明名称 HALF-TONE PHASE SHIFT BLANKMASK, PHOTOMASK AND MANUFACTURING METHOD THEREOF
摘要 Provided is a half-tone phase shift blank mask, which has an adequate light transmission in a range of exposure light wavelengths, has resistance against aqueous ammonia by forming phase shift layer comprising germanium, and shows a high selectivity to a transparent substrate. The half-tone phase shift blank mask comprises a phase shift layer(2), a light-shielding layer(4) and a resist layer(6) on a transparent substrate(1), wherein the phase shift layer has at least one layer, comprises 20-80 at% of germanium(Ge), and shows a transmission ratio of 50% or less in an exposure light wavelength of 500 nm or less. The phase shift layer is a single layer or multi layer, and at least one layer thereof comprises at least one material selected from Group 2, 3, 4 and 5 elements, transition metals, lanthanoids, actinoids, O, C and N.
申请公布号 KR20070072337(A) 申请公布日期 2007.07.04
申请号 KR20060073193 申请日期 2006.08.03
申请人 S&STECH CO., LTD. 发明人 NAM, KEE SOO;CHA, HAN SUN;YANG, SIN JU;YANG, CHUL KYU;KANG, JU HYUN
分类号 G03F1/32;G03F1/26 主分类号 G03F1/32
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