| 摘要 |
A CMOS image sensor is provided to improve the hardness of a micro lens by forming a thin film on the surface of a micro lens through an HMDS(hexamethyldisilazane) gas flow process and a bake process. A plurality of photodiodes(32) are formed at regular intervals on a semiconductor substrate(31). An interlayer dielectric(33) is formed on the resultant structure. Color filter layers(34) are formed on the interlayer dielectric, corresponding to each photodiode. A planarization layer(35) is formed on the resultant structure. Micro lenses(38) are formed on the planarization layer, corresponding to each photodiode. A passivation layer(39) is formed on the micro lens through a gas flow process using HMDS gas and a bake process, protecting the micro lens. The bake process is performed at a temperature of 200 °C or higher and for a time interval of 180 seconds.
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