| 摘要 |
A thin film transistor array substrate and a method for manufacturing the same are provided to form a thin film transistor array with three masks by depositing a pixel electrode forming material after patterning data lines without interposing a passivation layer between a data line layer and a pixel electrode layer, and defining a channel of a semiconductor layer, thereby simplifying a process and increasing the production yield. A plurality of gate lines and data lines cross on a substrate(100) for forming a plurality of pixel areas. A plurality of thin film transistors are formed at cross parts of the gate lines and the data lines, formed of gate electrodes(101a) protruded from the gate lines, source electrodes(102a) protruded from the data lines, and drain electrodes(102b) separated from the source electrodes. A plurality of common lines(111) are formed in the same direction as the gate lines, in parallel with the gate lines. First storage electrodes(111a) are formed on the drain electrodes, contacting with the drain electrodes. A plurality of common electrodes are formed at the pixel areas, branched in a finger shape. A plurality of pixel electrodes alternate with the common electrodes. Second storage electrodes(103a) are partially overlapped with the first storage electrodes. |
