| 摘要 |
A semiconductor device having a capacitor of oxide-nitride-oxide structure and its fabricating method are provided to increase capacitance per unit area of the capacitor by forming a dielectric film using oxide-nitride-oxide structure. An isolation film is selectively formed on a silicon substrate(10), and a gate oxide layer(16b) is formed on the silicon substrate. A gate electrode(17b) is formed on the gate oxide layer, and capacitor dielectric films(14a,15a,16a) are formed on the substrate adjacent to the gate oxide layer. A capacitor upper electrode(17a) is formed on the capacitor dielectric films. The capacitor dielectric film is composed of a first oxide layer pattern, a nitride layer pattern and a second oxide layer pattern.
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