| 摘要 |
A method for manufacturing a flash memory device is provided to prevent the generation of interference between adjacent cells and to distribute uniformly a cell threshold voltage by increasing the capacitance using a conductive layer formed between the cells. A plurality of cell gates composed of a tunnel oxide layer(102), a floating gate and a control gate are formed on a semiconductor substrate(101). A junction region is formed on the substrate between the cell gates. A spacer(107) is formed at both sidewalls of the cell gate. A conductive layer(108) is formed between the cell gates. An interlayer dielectric(109) is formed on the entire surface of the resultant structure. The conductive layer includes a polysilicon layer and a tungsten film.
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