发明名称 |
Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions |
摘要 |
A semiconductor structure comprising a first transistor element and a second transistor element is provided. Stress in channel regions of the first and the second transistor element is controlled by forming stressed layers having a predetermined stress over the transistors. The stressed layers may be used as etch stop layers in the formation of contact vias through an interlayer dielectric formed over the transistors.
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申请公布号 |
US7238578(B2) |
申请公布日期 |
2007.07.03 |
申请号 |
US20050114262 |
申请日期 |
2005.04.26 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BURBACH GERT;STEPHAN ROLF;WIECZOREK KARSTEN;HORSTMANN MANFRED |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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