发明名称 Growth of textured gallium nitride thin films on polycrystalline substrates
摘要 A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure.
申请公布号 US7238232(B1) 申请公布日期 2007.07.03
申请号 US20030427747 申请日期 2003.04.30
申请人 UNIVERSITY OF LOUISVILLE 发明人 SUNKARA MAHENDRA KUMAR;CHANDRASEKARAN HARI;LI HONGWEI
分类号 C30B25/12 主分类号 C30B25/12
代理机构 代理人
主权项
地址