发明名称 METHOD OF REMOVING FOREIGN SUBSTANCE OF A PHOTO MASK
摘要 A particle removing method of a photomask is provided to remove particles from a photomask and to remove simultaneously predetermined ions capable of generating the particles in the air by using a gas spraying process. A photomask is formed by forming a light shielding pattern(110) on a quartz substrate(100). The photomask is loaded in exposure equipment. An exposure process is performed by using the photomask. A gas spraying process is performed on the photomask under the exposure process by using a predetermined gas. An inert gas is used as the predetermined gas. The inert gas is used for removing ion residues and particles caused by the ion residues remaining in the air.
申请公布号 KR20070068913(A) 申请公布日期 2007.07.02
申请号 KR20050131002 申请日期 2005.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HA, TAE JOONG
分类号 H01L21/027 主分类号 H01L21/027
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