CLEANING METHOD OF SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

A method of rinsing semiconductor fabricating equipment is provided to remove the byproduct of (NH4)2SiF6 generated when removing a natural oxide layer which is soluble by using water. An etching gas containing ammonia and nitrogen trifluoride is supplied on a wafer(W) with a natural oxide layer(100a). The etching gas is reacted with the natural oxide layer by generating plasma to form a byproduct of ammonium fluorosilicide. The wafer is heated to absorb the byproduct in semiconductor manufacturing equipment, and then the byproduct is removed by using water.