| 摘要 |
PROBLEM TO BE SOLVED: To reduce the height of an optical layer of a solid state imaging element manufactured by laminating the optical layer on an upper layer of a semiconductor substrate on which a photodiode etc. are formed. SOLUTION: The solid state imaging element comprises a pixel composed of a plurality of pixels arranged and formed on the light receiving surface of the semiconductor substrate, and a peripheral circuit formed on the semiconductor substrate and provided around the pixel. When manufacturing the solid state imaging element, a first insulating layer 37 is laminated together on the peripheral region and on the pixel, a wiring layer 51 of the peripheral circuit is laminated on the first insulating layer 37n of the peripheral region, and then a second insulating layer 38 is laminated together on the pixel and on the peripheral region. In this case, when laminating the wiring layer 51, the first insulating layer 37n of the peripheral region is shaved by a predetermined thickness (d), and then the lamination of the wiring layer 51 and the lamination of the second insulating layers 38, 38n are conducted. COPYRIGHT: (C)2007,JPO&INPIT
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