发明名称 COMPOSITION FOR FORMING LOW DIELECTRIC CONSTANT FILM
摘要 PROBLEM TO BE SOLVED: To provide composition or the like for forming a low dielectric constant film capable of forming a film with high strength and low dielectric constant. SOLUTION: The composition for forming a low dielectric constant film contains at least polysiloxane which is a hydrolysis product of alkoxysilane represented by a general formula (1), and two or more radiolytic compounds maximum absorption wavelengths of which are different from each other. Here, X in the general formula (1) represents at least one of a hydrogen atom, a fluorine atom, alkyl group, aryl group, vinyl group and alicyclic group. R represents at least one of a hydrogen atom, alkyl group, aryl group, vinyl group and alicyclic group. An 'n' represents an integer of 0 to 3. There are preferable aspects such as an aspect in which a content of the radiolytic compound is 0.1 to 200 parts by mass to 100 parts by mass of the polysiloxane, an aspect which contains two or more radiolytic compounds maximum absorption wavelengths of which are different from each other, an aspect which contains two or more radiolytic compounds molecule sizes of which are different from each other, or the like. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007165914(A) 申请公布日期 2007.06.28
申请号 JP20070000257 申请日期 2007.01.04
申请人 FUJITSU LTD 发明人 KON JUNICHI;YANO EI;NAKADA YOSHIHIRO;SUZUKI KATSUMI
分类号 H01L21/312;C08K5/03;C08K5/375;C08L83/04 主分类号 H01L21/312
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