SOI SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE

摘要

On a surface side (bonding side) of a single crystal Si substrate (10), a uniform ion implantation layer (11) is formed at a prescribed depth (average ion implantation depth (L)) in the vicinity of the surface. The single crystal Si substrate (10) and a transparent insulating substrate (20) are adhered by having the surfaces of the substrates as bonding surfaces, and bonding process is performed by heating the work under such status at a temperature of 350°C or below. Such temperature of 350°C or below is determined by considering a difference between the thermal expansion coefficient of the single crystal Si and that of quartz, a distortion quantity due to such difference between the thermal expansion coefficients, the distortion quantity, and the thicknesses of the single crystal Si substrate (10) and the transparent insulating substrate (20), and is preferably at 100-300°C. After such bonding process, Si-Si bonding in the ion implantation layer (11) is cut by applying impact from the external, and the single crystal silicon thin film is mechanically peeled along a crystal plane at a position equivalent to the prescribed depth (average ion implantation depth (L)) in the vicinity of the surface of the single crystal Si substrate (10).