| 摘要 |
PROBLEM TO BE SOLVED: To enhance heat resistance of a semiconductor device having a WLP structure. SOLUTION: Over the entire circumferential edge of a chip, a dam layer 8 comprising such a material that exhibits proper adhesion to any one of an Si substrate 2, a PI film 6 and a sealing resin 10 is formed between the Si substrate 2 and the sealing resin 10 of the chip to straddle the PI film 6 and the Si substrate 2. Even if cracking takes place at the junction of the Si substrate 2 and the sealing resin 10 on the side face of a semiconductor device 1 and under heating environment, since penetration of cracking to the inside from the dam layer 8 is suppressed, stripping in the sealing resin 10 or the chip is suppressed, and its performance is sustained. COPYRIGHT: (C)2007,JPO&INPIT
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