发明名称 |
ALIGNMENT METHOD, DESIGN METHOD OF MASK PATTERN, MASK, DEVICE MANUFACTURING METHOD, ALIGNMENT DEVICE, AND EXPOSURE DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method or the like of accurately aligning a substrate with a strained silicon technology applied, and a design method or the like of mask pattern for forming an alignment mark in a substrate with the strained silicon technology applied. <P>SOLUTION: A device pattern is formed by an alignment method at a predetermined position of a substrate P while locally straining specific regions C, E. The method comprises a first process of obtaining information regarding the specific regions C, E based on design information of the device pattern, and a second process of fixing an alignment condition when performing alignment based on information obtained. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007165684(A) |
申请公布日期 |
2007.06.28 |
申请号 |
JP20050361549 |
申请日期 |
2005.12.15 |
申请人 |
NIKON CORP |
发明人 |
KANATANI YUHO;KAWAKUBO SHOJI |
分类号 |
H01L21/027;G03F9/00;H01L21/68 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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