| 摘要 |
A CMOS (complementary metal oxide semiconductor) image sensor and method of fabricating the same is provided. The CMOS image sensor can include: a semiconductor substrate in which an active region and a device isolation region are defined; a photodiode region including a first region and a second region extending from the first region formed on the active region, wherein impurity ions of a first conductivity type and impurity ions of a second conductivity type are implanted in the first region, and impurity ions of the first conductivity type are implanted in the second region; and a transistor and an impurity diffusion region of a first conductivity type formed on a transistor region of the active region.
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