| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a circuit module for high frequency in which isolation is enhanced for extraneous emission waves leaked from a semiconductor circuit chip. <P>SOLUTION: A resistor film 7 is formed on the side opposite to a dielectric substrate 1 of a semiconductor circuit chip 6 mounted on the dielectric substrate 1 through ground metal layers 2 and 4. Distance from the ground metal layer to the resistor film is equal to a quarter of wavelength at a predetermined frequency, and the resistor film 7 has a sheet resistance equal to the characteristic impedance of air. A separate dielectric substrate on which a metal layer is formed may be mounted on the side opposite to the resistor film 7. When the resistor film 7 is bonded to the separate dielectric substrate, it has a sheet resistance equal to a characteristic impedance dependent on the permeability of material of the semiconductor circuit chip. When the resistor film 7 is formed while spaced apart from the semiconductor circuit chip, it has a sheet resistance equal to the characteristic impedance of air and the thickness of the separate dielectric substrate is equal to a quarter of wavelength at a predetermined frequency. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
