| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor memory device which reduces the number of process steps. SOLUTION: On a first conductive semiconductor layer formed on a first conductive semiconductor substrate so as to be isolated by an insulating film by a gate pre-production process, a NAND cell unit is formed to have a memory cell formed by laminating a floating gate and a control gate, and a select gate transistor. On the semiconductor layer, a second conductive layer is formed as a channel area of the select gate transistors by selective ion implantation. Select gate lines exposed to open side walls at a bit line contact position and a source line contact position are covered with an insulating film for ion implantation, and a first conductive diffusion layer is formed for bit line contact and source line contact. COPYRIGHT: (C)2007,JPO&INPIT
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