| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element with a structure whereby an incident rate of incident light made incident onto each pixel of the solid-state imaging element can be enhanced. SOLUTION: The solid-state imaging element includes a semiconductor substrate 10 on the surface of which a plurality of photoelectric conversion elements are formed; micro lenses 12 each provided onto a light receiving region (opening) of each photoelectric conversion element on the semiconductor substrate 10, and of a multi-layer (at least two layer or over) structure wherein the layer closer to the light receiving region is formed by a material with a greater refractive index. The light made incident onto each micro lens 12 is refracted with a greater refraction index layer toward the light receiving region as the light more closely approaches each photoelectric conversion element. COPYRIGHT: (C)2007,JPO&INPIT
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