| 发明名称 |
METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL |
| 摘要 |
An AlN single crystal is grown by pressurizing a melt comprising at least gallium, aluminum and sodium in an atmosphere comprising nitrogen. Preferably, the AIN single crystal is grown under a nitrogen partial pressure of 50 atms or lower and at a temperature of 850° C. or higher and 1200° C. or lower.
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| 申请公布号 |
US2007144427(A1) |
申请公布日期 |
2007.06.28 |
| 申请号 |
US20070682385 |
申请日期 |
2007.03.06 |
| 申请人 |
NGK INSULATORS, LTD. |
发明人 |
IWAI MAKOTO;IMAI KATSUHIRO |
| 分类号 |
C30B11/00;C30B23/00;C30B28/12 |
主分类号 |
C30B11/00 |
| 代理机构 |
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