Negative to positive transition for e.g. transistor, has particles radiated in semiconductor material, where energies of particles and radiation intensity are controlled according to distribution of donors and acceptors

摘要

The transition has particles of more than 1000 electron volt energies radiated in a semiconductor material. The energies of the particles and radiation intensity are controlled according to a preset distribution of donors and acceptors. Atoms are radiated in ionized or non-ionized condition. Electrons and the atoms of atomic number Z are radiated in temporal controlled composition. The control of the radiation of the particles takes place in a charged condition with electromagnetic fields.