发明名称 |
Integrated semiconductor device and method of manufacturing thereof |
摘要 |
An integrated semiconductor device containing semiconductor elements that have respective desired on-resistances and breakdown voltages achieves appropriate characteristics as a whole of the integrated semiconductor element. The integrated semiconductor device includes a plurality of semiconductor elements formed in a semiconductor layer and each having a source of an n type semiconductor, a drain of the n type semiconductor and a back gate of a p type semiconductor between the source and the drain. At least a predetermined part of the drain of one semiconductor element and a predetermined part of the drain of another semiconductor element have respective impurity concentrations different from each other.
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申请公布号 |
US2007148874(A1) |
申请公布日期 |
2007.06.28 |
申请号 |
US20070703628 |
申请日期 |
2007.02.08 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
NITTA TETSUYA;TERASHIMA TOMOHIDE |
分类号 |
H01L21/336;H01L21/8234;H01L21/266;H01L21/84;H01L27/088;H01L27/12;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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