发明名称 Focused ion beam apparatus
摘要 In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.
申请公布号 US7235798(B2) 申请公布日期 2007.06.26
申请号 US20050151425 申请日期 2005.06.14
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 ISHITANI TOHRU;MUTO HIROYUKI;MADOKORO YUICHI
分类号 G21K5/10 主分类号 G21K5/10
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