发明名称 |
Focused ion beam apparatus |
摘要 |
In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.
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申请公布号 |
US7235798(B2) |
申请公布日期 |
2007.06.26 |
申请号 |
US20050151425 |
申请日期 |
2005.06.14 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
ISHITANI TOHRU;MUTO HIROYUKI;MADOKORO YUICHI |
分类号 |
G21K5/10 |
主分类号 |
G21K5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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