SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device having a vertical channel and a manufacturing method thereof are provided to improve signal transfer characteristic by reducing the whole resistance of a word line. Plural active pillars(140) are extended to a direction vertical to a main surface of a semiconductor substrate(100). A word line structure wraps the circumference of the active pillars and connects the active pillars located on the same row. A top and bottom source/drain region(130) is arranged on the upper and lower active pillar centering around the word line structure. The word line structure includes a ring-shaped gate electrode(161a) and a word line(161c). The ring-shaped gate electrode wraps the circumference of the active pillar. The word line connects the ring-shaped gate electrodes formed on the circumference of the active pillars located on the same row.