| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor light-emitting element capable of stabilizing a drive voltage by reducing carrier depletion, due to spontaneous polarization and piezo polarization generated at the interface between an AlGaN semiconductor layer and a GaN-based semiconductor layer. <P>SOLUTION: A gallium nitride semiconductor crystal 2 containing a light emitting region is formed on an R surface in a sapphire substrate 1. In another configuration, the gallium nitride semiconductor crystal 2 is formed on the surfaces or on the M surface of GaN substrates 3, 4. In the gallium nitride semiconductor crystal 2, the growth surface becomes a nonpolar surface instead of an N (nitrogen) polar surface and a Ga polar surface, thus reducing the magnitude of an electric field due to the spontaneous polarization and the piezo polarization generated on the interface of p-side GaN/AlGaN and hence avoiding carrier depletion. <P>COPYRIGHT: (C)2007,JPO&INPIT |
