| 发明名称 |
Extreme high mobility CMOS logic |
| 摘要 |
A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate. |
| 申请公布号 |
US2007138565(A1) |
申请公布日期 |
2007.06.21 |
| 申请号 |
US20050305452 |
申请日期 |
2005.12.15 |
| 申请人 |
INTEL CORPORATION |
发明人 |
DATTA SUMAN;HUDAIT MANTU K.;DOCZY MARK L.;KAVALLEROS JACK T.;AMLAN MAJUMDAR;BRASK JUSTIN K.;JIN BEEN-YIH;METZ MATTHEW V.;CHAU ROBERT S. |
| 分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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