| 摘要 |
A bonding pad structure in a semiconductor device includes a first metal layer formed over an underlying interlayer insulating film over a semiconductor substrate, a first interlayer insulating film formed over the first metal layer, first via holes formed in the first interlayer insulating film and set apart from each other at non-uniform intervals, first vias filling the first via holes and one or more residual portions of a first via layer forming the first vias, and a second metal layer formed over the first vias and said one or more residual portions of the first via layer. The residual portions are formed together with and between the first vias due to the non-uniform intervals between the first vias.
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